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BTB24 TRIAC
Symbol |
Parameter |
Value |
Unit |
|
IT(RMS) |
Rms on-state current(full sine wave) |
24 |
A |
|
ITSM |
Non- repetitive Peak on-stateCurrent (Tj=25℃,tp=20ms) |
240 |
A |
|
I2t |
I2t for fusing(tp=10ms) |
200 |
A2S |
|
IGM |
Peak gate current |
5 |
A |
|
VGM |
Peak gate voltage |
16 |
V |
|
PGM |
Peak gate power |
40 |
W |
|
PG(AV) |
Average gate power |
1 |
W |
|
dIT/dt |
Repetitive rate of rise of on-state current after triggering(IT=6A,IG=0.2A,dlG/dt=0.2A/us) |
Ⅰ-Ⅱ-Ⅲ |
50 |
A/μs |
IV |
50 |
|||
|
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+150 -40--+125 |
℃ |
|
*Thermai Resistances
Symbol |
Parameter |
Condition |
|
Type |
Unit |
Rth j-c |
Thermal Resistance,Junction to case |
One cycle |
BTA |
2.1 |
℃/W |
BTB |
1.2 |
℃/W |
|||
Rth j-a |
Thermal Resisatance,Junction to ambient |
———— |
—— |
60 |
℃/W |
*Electrical characteristics(Tj=25℃ unless otherwise stated)
Symbol |
Conditions |
Type |
Max |
Unit |
|
IGT
|
BTB24 VD=12V IT=0.1A T2+ G+ T2+ G- T2- G- |
11 15 20 |
18 30 30 |
mA mA mA |
IH |
VD=12V IGT=0.1A |
|
50 |
mA |
VTM |
IT=24A |
—1.25— |
1.5 |
V |
I DRM |
V DRM=800V |
|
10 |
μA |
IRRM |
VRRM=800V |
|
15 |
μA |
VGT |
VD=12V IT=0.1A Tj=125℃ |
——
|
1.5 |
V |
ID |
VD=VDRM(MAX) Tj=125℃ |
—— |
0.5 |
mA |
*Dynamic characteristics (Tj=25℃ unless otherwise stated)
Symbol |
Test Conditions |
Type |
Min |
Max |
Unit |
|
dV/dt
|
VDM=67%VDm(MAX) Tj=125℃ |
500 |
250
|
——
|
V/μs |
(dV/dt)c |
(dI/dt)c=7A/ms Tj=125℃ |
—— |
10 |
|
μs |
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