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SPB20N60C3
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-263-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 20.7 A
Rds On - Drain-Source Resistance: 190 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.1 V
Qg - Gate Charge: 87 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 208 W
Channel Mode: Enhancement
Tradename: CoolMOS
Series: CoolMOS C3
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 4.5 ns
Height: 4.4 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 5 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 67 ns
Typical Turn-On Delay Time: 10 ns
Width: 9.25 mm
Part # Aliases: SP000013520 SPB2N6C3XT SPB20N60C3ATMA1
Unit Weight: 0.139332 oz
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