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| GaN HEMT GN1214P54 | ||||||||||
| GN1214P54 series GaN Internally Matched Power Amplifier | ||||||||||
Performance characteristics: | ||||||||||
| Covering the working frequency band:1.2GHz ~1.4GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package | ||||||||||
|
Product introduction: |
||||||||||
| Electrical performance table: | ||||||||||
| 1.Working conditions:50Ω test system,VDS=+50V,IDS=50mA.((Typical test conditions: TA = +25℃，pulse width:200us,10% duty cycle.) | ||||||||||
| Parameter | Test Conditions | Minimum | Typically | maximum | Unit | |||||
| Saturation power | Freq.=1.2GHz~1.4GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA |
54.0 | - | - | dBm | |||||
| Power Gain | 16 | - | - | dB | ||||||
| Power Added Efficiency |
63.0 | - | - | % | ||||||
| Power Flatness | - | 1.0 | dB | |||||||
| Pinch-off voltage | VDS=6V | IDS≤100mA | -5 | - | -3.50 | V | ||||
| Gate-source reverse Current |
VDS=0V | VGS=-10V | - | 5 | uA | |||||
| Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar power specifications,higher efficiency and wider bandwidth can be customized. | ||||||||||
| Working limit parameter: | ||||||||||
| Source-drain voltage Vds | +100V | wasted power （Tc=25℃，VDS=+50V) |
161W | |||||||
| Gate-source voltage Vgs | -10V | storage temperature | -55℃~+125℃ | |||||||
| Operating temperature | -40℃~+85℃ | - | - | |||||||
AFTER-SALES GUARANTEE
1. Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if there are any problems about our products.
2. If you find quality problems about our products after receiving them, you could test them and apply for unconditional refund if it can be proved.
3. If the products are defective or they don't working, you can return to us within 1 YEAR, all transportation and customs charges of the goods are borne by us.
Yingda is a leading and trusted supplier of all electronic components such as IC , Connectors, Transistors, Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive, Medical, Agricultural, Consumer electronics grade components. We provide all electronic components that exist. Yingda has always been a customer-driven and quality-focused company and we have more than 10 years experience in this field. You can fully trust us since we have good reputation and always been 100% honest and genuine to our clients.
MADE-IN-CHINA alternative solution provider for brand power tubes (internal matching, external matching), amplifier chips, amplifier modules, etc.
Main products: amplifiers, attenuators, detectors, diodes, directional couplers, front-end modules, hybrid microcircuits, infrastructure subsystems, mixers, demodulators, phase shifters, synthesizers, etc.
1. Microwave RF Devices MADE-IN-CHINA CNC Phase Shifters
2. High-frequency tubes, In-situ replacement: MA-COM, Motorola, lucy(at)yingdainter(dot)com; lucyzhang(at)yingdainter(dot)com;
| Product | Frequency | Power | Package |
| Gallium Nitride Diode GaN HEMT | 1.8~3.8G | 6W | DFN4540 |
| Gallium Nitride Diode GaN HEMT | 1.8~3.8G | 15W | DFN4540 |
| Gallium Nitride Diode GaN HEMT | 0.5-4G | 30W | JY04f050 |
| Gallium Nitride Diode GaN HEMT | 0.5~6G | 30W | DFN3040 |
| Gallium Nitride Diode GaN HEMT | 2.6G | 16+32 | DFN7065 |
| Gallium Nitride Diode GaN HEMT | 3.5G | 16+32 | DFN7065 |
| Gallium Nitride Diode GaN HEMT | 2.6G | 32+64 | DFN70100 |
| Gallium Nitride Diode GaN HEMT | 3.5G | 32+64 | DNF70100 |
| Gallium Nitride Diode GaN HEMT | 5.8G | 50W | 360 |
| Gallium Nitride Diode GaN HEMT | 5.8G | 100W | 360 |
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