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Home > Electrical & Electronics > Electrical Control System > ABB IGCT Module 5SHX10H6004 3BHB003230R0101

ABB IGCT Module 5SHX10H6004 3BHB003230R0101

ABB IGCT Module 5SHX10H6004 3BHB003230R0101 photo-1

ABB IGCT Module 5SHX10H6004 3BHB003230R0101 photo-2

Negotiable MOQ: 1 Piece (Price negotiable depending on order volume and customization)

Key Specifications

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Material:

Other, Global universal model

Condition:

Other, Global universal model

Task:

Other, Global universal model

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Guizhou Yuanmiao Automation Equipment Co., Ltd.

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Port of Shipment:

China

Delivery Detail:

Delivery time depends on order quantity.

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Material Other, Global universal model

Condition Other, Global universal model

Task Other, Global universal model

Mathematical Model Other, Global universal model

Signal Other, Global universal model

Customized Non-Customized

Structure Other, Global universal model

Rated voltage 6500V

Rated current 1000A

Surge current ≥30kA

Junction capacitance approximately 50pF

Weight About 2.5 kilograms

I. Basic Information

Model: 5SHX10H6004 3BHB003230R0101
Type: Integrated Gate-Commutated Thyristor (IGCT), a press-fit high-power power semiconductor device with an integrated gate drive interface, specifically designed for ultra-high voltage and ultra-high current scenarios.
Application Fields:

Converter valves for High-Voltage Direct Current (HVDC) transmission, Flexible Alternating Current Transmission Systems (FACTS).
Large-scale energy storage converters (PCS), offshore wind converters (6MW+ units).
Industrial applications: Ultra-high voltage and high-power drive systems for mining hoists, metallurgical rolling mills, etc.

II. Functional Features1. Ultra-High Voltage and High-Power Handling Capability

Voltage Rating:

Rated Repetitive Peak Off-State Voltage ( $V_{DRM} / V_{RRM}$ ): 6500V (suitable for medium-voltage grids of 6kV and above, such as 6.6kV systems).

Current Capacity:

Average On-State Current ( $I_{T(AV)}$ ): 1000A (@ rated junction temperature $T_{j} = 12 5^{\circ} C$ , 50Hz sine wave), supporting 10MW-level power conversion.
Surge Current ( $I_{TSM}$ ): Withstands short-term impulse currents of over 30kA (8.3ms half-sine wave), adapting to extreme conditions like grid faults or motor starting.

2. Efficient Switching and Reliability

Switching Characteristics:

Switching Frequency: 100–500Hz (superior to traditional GTO, close to IGBT levels), no tail current during turn-off, energy loss reduced by over 30%.
Eliminates the need for traditional GTO RC snubber circuits, reducing system size and increasing efficiency to over 98%.

Environmental Tolerance:

Operating Junction Temperature: , Storage Temperature: .
Press-fit metal ceramic packaging, resistant to vibration (10–500Hz, 20g) and shock (150g, 11ms), suitable for harsh environments like offshore wind.

3. Intelligent Control and Protection

Gate Drive:

Low-power triggering: Gate trigger current , trigger voltage , compatible with ABB drive boards (e.g., UNS062AE06).
Integrated digital drive interface supports real-time monitoring of gate voltage, current, and junction temperature.

Protection Mechanisms:

Built-in temperature sensor supports overheat shutdown (OTP, threshold $13 5^{\circ} C$ ).
Combined with the drive system to implement di/dt and dv/dt limiting to prevent overvoltage and overcurrent damage.

4. Modularity and System Expansion

Packaging Design:

Planar press-fit packaging (dimensions: approx. Φ120mm × 50mm), supports direct installation on water-cooled heat sinks, thermal resistance $R_{thJC} \leq 0.01 K/W$ .
Can be paralleled (up to 4 units in parallel, current up to 4000A) or series-connected (voltage up to 13kV+), meeting customized requirements.

Compatibility:

Compatible with ABB’s full range of IGCT drive and monitoring systems, supports plug-and-play, reducing debugging time.

III. Technical Parameters

Parameter	Value/Description
Rated Voltage $V_{DRM}$	6500V
Rated Current $I_{T(AV)}$	1000A (@50Hz, $T_{j} = 12 5^{\circ} C$ )
Surge Current $I_{TSM}$	≥30kA (8.3ms half-sine wave)
On-State Voltage Drop $V_{T}$	Typical 1.8V (@1000A)
Junction Capacitance $C_{j}$	Approx. 50pF
Parasitic Inductance $L$	Nanohenry level (
Packaging Form	Press-fit metal ceramic housing, M8 bolt fixing
Weight	Approx. 2.5kg

IV. Working Principle

IGCT combines the high voltage/current capability of thyristors with the fast switching characteristics of MOSFETs:

Turn-On Phase: A positive pulse applied to the gate triggers the PNPN structure to conduct, with a current path similar to thyristors and low on-state loss.
Turn-Off Phase: A reverse voltage applied to the gate rapidly extracts carriers through the built-in MOS structure, achieving hard turn-off in only 5–10μs (vs. 50–100μs for traditional GTO).
Snubberless Advantage: Eliminates RC snubber circuits, improving system reliability and reducing costs by approx. 20%.

V. Typical Application ScenariosPower Grid Transmission

HVDC converter valves (e.g., ±800kV UHV projects) for AC/DC conversion.
STATCOM/SVC devices to enhance grid stability and compensate for reactive power.

Renewable Energy

10MW+ offshore wind converters supporting 6.6kV high-voltage grid connection.
Large-scale energy storage power stations (100MWh level) for high-voltage and high-current charging/discharging.

Industrial Heavy Equipment

10kV mining hoist frequency converters supporting frequent start-stop and four-quadrant operation.
8000kW rolling mill drives in metallurgy with response speed

VI. Comparison with Similar Products

Dimension	IGCT 5SHX10H6004	Traditional GTO	High-Voltage IGBT (e.g., 6500V)
Voltage Rating	6500V	4500–6000V	6500V
Current Capacity	1000A (parallelable)	600–800A	600–800A
Switching Frequency	100–500Hz	50–100Hz	1–10kHz
Losses	Low (no tail current)	High	Moderate (higher switching losses)
Snubber Circuit	Not required	Required	Simplified snubber needed
Typical Applications	Ultra-high power	Medium-high voltage traditional	Medium-voltage high-frequency

VII. Selection Recommendations

Voltage Matching: For 6kV-class systems, prioritize 6500V voltage-resistant models (like this model); for 4kV-class systems, consider the lower-range 5SHX08F4502 (4500V, 800A).
Heat Dissipation Design: Must be paired with a water-cooled heat sink (e.g., ABB 3HAC17301-1) to ensure junction temperature does not exceed 125°C.
Drive Compatibility: Must use ABB-specific drive boards (e.g., 3BHB003231R0101) to avoid gate signal distortion causing device damage.

Product Tags: 5SHX10H6004 , 3BHB003230R0101 , IGCT Module